Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the desi
IRL2203NL_InternationalRectifier.pdf
Datasheet Details
IRL2203NS, IRL2203NL
International Rectifier
232.88 KB
Power mosfet.
This datasheet PDF includes multiple part numbers: IRL2203NS, IRL2203NL.
Please refer to the document for exact specifications by model.
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