IRL2203NPBF Datasheet - International Rectifier

IRL2203NPBF Power MOSFET

l l D VDSS = 30V RDS(on) = 7.0mΩ G S ID = 116A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXF.

IRL2203NPBF Features

* 40) Dimensions are shown in millimeters (inches) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- COLLECTOR 2- DRAIN 3- EMITTER 3- SOURCE 4 - DRAIN LEAD ASSIGNMENTS

IRL2203NPBF_InternationalRectifier.pdf