IRL2310 Datasheet - International Rectifier

IRL2310, Power MOSFET

www.DataSheet4U.com PD - 9.1275 PRELIMINARY IRL2310 HEXFET ® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating .
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon.

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IRL2310_InternationalRectifier.pdf

IRL2310 Datasheet Preview — Preview of IRL2310 PDF

Datasheet Details

Part number:

IRL2310

Manufacturer:

International Rectifier

File Size:

81.61 KB

Description:

Power MOSFET

Applications

* at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. VDSS = 100V RDS(on) = 0.040 Ω ID = 40A Absolute Maximum Ratings Parameter ID @ T C = 25°C ID @ T C = 100°C IDM PD @T C = 2

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IRL2310 Power MOSFET International Rectifier

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