IRL1004 - HEXFET Power MOSFET
l l D VDSS = 40V RDS(on) = 0.0065Ω G ID = 130A S Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
IRL1004 Features
* AT E 2 - D RA IN 3 - S OU R C E 4 - D RA IN 14 .09 (.55 5) 13 .47 (.53 0) 4 .06 (.16 0) 3 .55 (.14 0) 3X 3X 1 .40 (.05 5) 1 .15 (.04 5) 0.93 (.037 ) 0.69 (.027 ) M B A M 3X 0.55 (.02 2) 0.46 (.01 8) 0.36 (.01 4) 2 .54 (.10 0) 2X N O TE S: 1 D IM EN S IO N ING & TOL ER A NC IN G P ER A N SI Y
