* AT E 2 - D RA IN 3 - S OU R C E 4 - D RA IN 14 .09 (.55 5) 13 .47 (.53 0) 4 .06 (.16 0) 3 .55 (.14 0) 3X 3X 1 .40 (.05 5) 1 .15 (.04 5) 0.93 (.037 ) 0.69 (.027 ) M B A M 3X 0.55 (.02 2) 0.46 (.01 8) 0.36 (.01 4) 2 .54 (.10 0) 2X N O TE S: 1 D IM EN S IO N ING & TOL ER A NC IN G P ER A N SI Y
IRL1004
International Rectifier
116.50 KB
Hexfet power mosfet.
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PD - 91702B
IRL1004
HEXFET® Power MOSFET
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic .
📁 Related Datasheet
IRL1004 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRL1004， IIRL1004
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤6.5mΩ ·Enhancement m.
IRL1004L - Power MOSFET
(International Rectifier)
l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Swit.
IRL1004LPBF - Power MOSFET
(International Rectifier)
..
PD - 95575
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating.
IRL1004PBF - Power MOSFET
(International Rectifier)
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching.
IRL1004S - Power MOSFET
(International Rectifier)
l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Swit.
IRL1004S - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .
IRL1004SPBF - Power MOSFET
(International Rectifier)
..
PD - 95575
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating.
IRL100HS121 - MOSFET
(Infineon)
IRL100HS121
Target Applications
Wireless charging Adapter Tele
Benefits
Higher power density designs Higher switching frequency Uses O.
