Datasheet Details
- Part number
- KSD363
- Manufacturer
- INCHANGE
- File Size
- 210.73 KB
- Datasheet
- KSD363-INCHANGE.pdf
- Description
- NPN Transistor
KSD363 Description
isc Silicon NPN Power Transistor INCHANGE Semiconductor KSD363 .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min).
Collector Power Dissipation-
: PC= 40W(Max)@ TC= 25℃.
Minimum Lot-to-Lot vari.
KSD363 Applications
* Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
PC
Collector Powe
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