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KSD363 Datasheet - INCHANGE

KSD363 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) *Collector Power Dissipation- : PC= 40W(Max)@ TC= 25℃ *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for B/W TV horizontal deflection output applications. ABSOLUT.

KSD363-INCHANGE.pdf

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Datasheet Details

Part number:

KSD363

Manufacturer:

INCHANGE

File Size:

210.73 KB

Description:

Npn transistor.

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KSD363 KSD363 NPN Transistor INCHANGE

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