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KSD363 - NPN Transistor

KSD363 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor KSD363 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Collector Power Dissipation- : PC= 40W(Max)@ TC= 25℃. Minimum Lot-to-Lot vari.

KSD363 Applications

* Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous PC Collector Powe

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Datasheet Details

Part number
KSD363
Manufacturer
INCHANGE
File Size
210.73 KB
Datasheet
KSD363-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE KSD363-like datasheet