KSD2012 - NPN Transistor
*High DC Current Gain- : hFE= 100 (Min)@ IC= 0.5A *Low Saturation Voltage- : VCE(sat)= 1.0V (Max) *High Power Dissipation : PC= 25 W(Max)@ TC= 25℃ *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designe
