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KSD2012 Datasheet - INCHANGE

KSD2012 NPN Transistor

*High DC Current Gain- : hFE= 100 (Min)@ IC= 0.5A *Low Saturation Voltage- : VCE(sat)= 1.0V (Max) *High Power Dissipation : PC= 25 W(Max)@ TC= 25℃ *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designe.

KSD2012-INCHANGE.pdf

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Datasheet Details

Part number:

KSD2012

Manufacturer:

INCHANGE

File Size:

192.72 KB

Description:

Npn transistor.

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