MBR20300C
FEATURES
- Low leakage current
- Low forword voltage
- High surge current capability
- Low stored charge majority carrier conduction
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching power supply
- Converters
- Reverse battery protection
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRMS
Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage
IF(AV)
Average Rectified Forward Current @Tc=125℃
VALUE
UNI T
IFSM
Nonrepetitive Peak Surge Current (60Hz half-sine wave )
Junction Temperature
-65~150 ℃
Tstg
Storage Temperature Range
-65~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark
Schottky Barrier Rectifier
INCHANGE Semiconductor
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX 3.0
UNIT...
