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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR20300CT
FEATURES ·Metal silicon junction, majority carrier conduction ·Low leakage current, low power loss, high efficiency ·Dual rectifier construction, positive center tap ·Guardring for overvoltage protection ·High surge current capability ·Low stored charge majority carrier conduction ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching power supply ·Converters ·Free-Wheeling diodes ·Reverse battery protection ·Center tap configuration
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRMS
VR
IF(AV)
Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage
Average Rectified Forward Current @Tc=120℃
VALUE
UNI T
300
V
20
A
IFSM
Nonrepetitive Peak Surge Cu
MBR20300CT Datasheet
