• Part: MBR60100PT
  • Description: Schottky Barrier Rectifier
  • Manufacturer: Inchange Semiconductor
  • Size: 212.94 KB
Download MBR60100PT Datasheet PDF
Inchange Semiconductor
MBR60100PT
FEATURES - Low Forward Voltage - 175℃ Operating Junction Temperature - Guaranteed Reverse Avalanche - Low Power Loss/High Efficiency - High Surge Capacity - Low Stored Charge Majority Carrier Conduction - Dual Rectifier Conduction, Positive Center Tap MECHANICAL CHARACTERISTICS - Case: Epoxy, Molded - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM IF(AV) IFSM DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC= 133℃ Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) Junction Temperature Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case VALUE UNIT ℃ -40~175 ℃ MAX 2.0 UNIT ℃/W isc website:.iscsemi. 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier ELECTRICAL CHARACTERISTICS...