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MJ13334 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
Low Collector-Emitter Saturation Voltage. 100% avalanche tested. Minimum Lot-to-Lot variations for robust device performance and reliable.

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Datasheet Specifications

Part number
MJ13334
Manufacturer
INCHANGE
File Size
201.06 KB
Datasheet
MJ13334-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for general purpose amplifiers ,low frequency switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 750 VCEO Collector-Emitter Voltage 450 VEBO Emitter-Base Voltage 6 IC Collector Current-Continuous

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