MJ15016 Datasheet - INCHANGE

isc Silicon PNP Power Transistor DESCRIPTION *Excellent Safe Operating Area *DC Current Gain- : hFE= 20-70@IC = -4A,VCE= -4V *Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1 V(Max)@ IC = -4A *Complement to the NPN MJ15015 *Minimum Lot-to-Lot variations for robust device p