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MJ15012 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor MJ15012.

General Description

·Excellent Safe Operating Area ·DC Current Gain- : hFE= 20(Min.)@IC = -2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max)@ IC = -4A ·Complement to the NPN MJ15011 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, disk head positioners , and other linear applications.

These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCEO(SUS) Collector-Emitter Voltage -250 VCEX Collector-Emitter Voltage -250 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -10 ICM Collector Current-Peak -15 IB Base Current-Continuous -2 IBM Base Current-Peak -5 IE Emitter Current-Continuous 12 IEM Emitter Current-Peak 20 PD Total Power Dissipation@TC=25℃ 200 Tj Junction Temperature 200 Tstg Storage Temperature -65~200 UNIT V V V A A A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case isc website:www.iscsemi.com MAX UNIT 0.875 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A;

MJ15012 Distributor