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MJ15016 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor.

General Description

·Excellent Safe Operating Area ·DC Current Gain- : hFE= 20-70@IC = -4A,VCE= -4V ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1 V(Max)@ IC = -4A ·Complement to the NPN MJ15015 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, stepping motor and other linear applications, and can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters,inverters and etc.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -15 A IB Base Current -7 A PD Total Power Dissipation@TC=25℃ 180 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.98 ℃/W MJ15016 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJ15016 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A;

IB= -0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A;

MJ15016 Distributor