MJ15012 Datasheet and Specifications PDF

The MJ15012 is a COMPLEMENTARY POWER TRANSISTORS.

Datasheet4U Logo
Part NumberMJ15012 Datasheet
Manufactureronsemi
Overview MJ15011 (NPN), MJ15012 (PNP) Preferred Devices Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed for high−power audio, disk. Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range Symbol VCEO VCEX VEB IC ICM IB IBM IE IEM PD TJ, Tstg Value 250 250 5 10 15 2 5 12 20 200 1.14
* 65 to + 200 Unit Vdc Vdc Vdc Adc Adc Adc Watts W/_C _C TO
*204AA (TO
*3) CASE 1
*07 STYLE 1 MARKING DIAGRAM.
Part NumberMJ15012 Datasheet
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 20(Min.)@IC = -2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max)@ IC = -4A ·Complement to the NPN MJ15011 ·Minimum Lot-to-Lot var. ge Temperature -65~200 UNIT V V V A A A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case isc website： MAX UNIT 0.875 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ .
Part NumberMJ15012 Datasheet
Description10 AMPERE COMPLEMENTARY POWER TRANSISTORS
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ15011/D Advance Information Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed . ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ .