MJ410 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 200V(Min. Low Collector Saturation Voltage- : VCE(sat)= 0. Mini.

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Datasheet Specifications

Part number: MJ410
Manufacturer: INCHANGE
File Size: 211.55 KB
Datasheet: MJ410-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for medium to high voltage inverters, converters, regulators and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER UNIT VALUE VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-C

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