Datasheet4U Logo Datasheet4U.com

MJ900 PNP Transistor

MJ900 Description

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min. High DC Current Gain- : hFE= 1000(Min. Low Collector Saturation Vo.

MJ900 Applications

* Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current

📥 Download Datasheet

Preview of MJ900 PDF
datasheet Preview Page 2

Datasheet Details

Part number
MJ900
Manufacturer
INCHANGE
File Size
203.82 KB
Datasheet
MJ900-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • MJ90 - (MJ900 / MJ901) Complementary Power Darlingtons (COM SET)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE MJ900-like datasheet