MJ900 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min. High DC Current Gain- : hFE= 1000(Min. Low Collector Saturation Vo.

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Datasheet Specifications

Part number: MJ900
Manufacturer: INCHANGE
File Size: 203.82 KB
Datasheet: MJ900-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current

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