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MJ900

PNP Transistor

MJ900 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.)
*High DC Current Gain- : hFE= 1000(Min.)@IC= -3A
*Low Collector Saturation Voltage- : VCE (sat)= -2.0V(Max.)@ IC= -3A
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*De.

MJ900 Datasheet (203.82 KB)

Preview of MJ900 PDF

Datasheet Details

Part number:

MJ900

Manufacturer:

INCHANGE

File Size:

203.82 KB

Description:

Pnp transistor.

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TAGS

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