MJ901 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor MJ901 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min. High DC Current Gain- : hFE= 1000(Min. Low Collector Saturation Vo.

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Datasheet Specifications

Part number: MJ901
Manufacturer: INCHANGE
File Size: 205.67 KB
Datasheet: MJ901-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for power linear and switching applications ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continunous -8 A IB Base Current-C

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