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MJ901 PNP Transistor

MJ901 Description

isc Silicon PNP Darlington Power Transistor MJ901 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min. High DC Current Gain- : hFE= 1000(Min. Low Collector Saturation Vo.

MJ901 Applications

* Designed for power linear and switching applications ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continunous -8 A IB Base Current-C

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Datasheet Details

Part number
MJ901
Manufacturer
INCHANGE
File Size
205.67 KB
Datasheet
MJ901-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE MJ901-like datasheet