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MJF18004 NPN Transistor

MJF18004 Description

isc Silicon NPN Power Transistor MJF18004 .
Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device performan.

MJF18004 Applications

* Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Curren

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Datasheet Details

Part number
MJF18004
Manufacturer
INCHANGE
File Size
211.08 KB
Datasheet
MJF18004-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE MJF18004-like datasheet