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MJH16006 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device per.

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Datasheet Specifications

Part number
MJH16006
Manufacturer
INCHANGE
File Size
215.48 KB
Datasheet
MJH16006-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 850 V VCEO(SUS

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