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MJH11012 NPN Transistor

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Description

isc Silicon NPN Darlington Power Transistor MJH11012 .
Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min. High DC Current Gain- : hFE= 1000(Min. Low Collector Saturation Volt.

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Datasheet Specifications

Part number
MJH11012
Manufacturer
INCHANGE
File Size
213.68 KB
Datasheet
MJH11012-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Co

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NPN Transistor INCHANGE
INCHANGE MJH11012-like datasheet