MJH11012 - NPN Transistor
*Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.) *High DC Current Gain- : hFE= 1000(Min.)@IC= 20A *Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A *Complement to the PNP MJ11011 *Minimum Lot-to-Lot variations for robust device performance and reliable
