MJH11017 Silicon PNP Darlington Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Darlington Power Transistor MJH11017 .
High DC Current Gain- : hFE = 400(Min)@ IC= -10A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -150V(Min). Low Collector-Emitter S.

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Datasheet Specifications

Part number: MJH11017
Manufacturer: Inchange Semiconductor
File Size: 222.87 KB
Datasheet: MJH11017-InchangeSemiconductor.pdf
Description: Silicon PNP Darlington Power Transistor

Applications

* Designed for general purpose amplifiers ,low frequency switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector C

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MJH11017 Silicon PNP Darlington Power Transistor Inchange Semiconductor

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