MJH11018 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor MJH11018 .
High DC Current Gain- : hFE = 400(Min)@ IC= 10A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 150V(Min). Low Collector-Emitter Sat.

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Datasheet Specifications

Part number: MJH11018
Manufacturer: Inchange Semiconductor
File Size: 224.46 KB
Datasheet: MJH11018-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for general purpose amplifiers ,low frequency switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 150 VCEO Collector-Emitter Voltage 150 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous

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MJH11018 Silicon NPN Power Transistor Inchange Semiconductor

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