Datasheet4U Logo Datasheet4U.com

MJH11018 Datasheet - Inchange Semiconductor

Silicon NPN Power Transistor

MJH11018 General Description

*High DC Current Gain- : hFE = 400(Min)@ IC= 10A *Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 150V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.5V(Max)@ IC= 10A = 4.0V(Max)@ IC= 15A *Complement to Type MJH11017 *Minimum Lot-to-Lot variations for robust d.

MJH11018 Datasheet (224.46 KB)

Preview of MJH11018 PDF

Datasheet Details

Part number:

MJH11018

Manufacturer:

Inchange Semiconductor

File Size:

224.46 KB

Description:

Silicon npn power transistor.

📁 Related Datasheet

MJH11012 NPN Transistor (INCHANGE)

MJH11017 Silicon PNP Darlington Power Transistor (Inchange Semiconductor)

MJH11017 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)

MJH11017 Complementary Darlington Silicon Power Transistors (ON)

MJH11018 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)

MJH11018 Complementary Darlington Silicon Power Transistors (ON)

MJH11019 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)

MJH11019 Complementary Darlington Silicon Power Transistors (ON)

MJH11020 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)

MJH11020 Complementary Darlington Silicon Power Transistors (ON)

TAGS

MJH11018 Silicon NPN Power Transistor Inchange Semiconductor

Image Gallery

MJH11018 Datasheet Preview Page 2

MJH11018 Distributor