Datasheet4U Logo Datasheet4U.com

MJW16010A NPN Transistor

MJW16010A Description

isc Silicon NPN Power Transistor MJW16010A .
Low Collector Saturation Voltage. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min). Wide Area of Safe Operation. Minimum.

MJW16010A Applications

* Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-EmitterVoltage 1000 V VCEO Coll

📥 Download Datasheet

Preview of MJW16010A PDF
datasheet Preview Page 2

Datasheet Details

Part number
MJW16010A
Manufacturer
INCHANGE
File Size
215.79 KB
Datasheet
MJW16010A-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • MJW16012 - 15 AMPERE NPN SILICON POWER TRANSISTORS (Motorola)
  • MJW16018 - POWER TRANSISTORS (Motorola)
  • MJW16110 - POWER TRANSISTORS (Motorola)
  • MJW16206 - POWER TRANSISTORS (Motorola)
  • MJW16212 - POWER TRANSISTOR (Motorola)
  • MJW1302A - PNP Silicon Power Bipolar Transistors (ON Semiconductor)
  • MJW18020 - NPN Silicon Power Transistors (ON)
  • MJW0281A - Complementary NPN-PNP Power Bipolar Transistors (ON Semiconductor)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE MJW16010A-like datasheet