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MJW21196 NPN Transistor

MJW21196 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor MJW21196 .
Total harmonic distortion characterized. High DC current gain. Excellent gain linearity. High SOA. Minimum Lot-to-Lot variations.

MJW21196 Applications

* The MJW21196 is specifically designed for high power audio output disk head positioners and linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC

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Datasheet Details

Part number
MJW21196
Manufacturer
INCHANGE
File Size
209.54 KB
Datasheet
MJW21196-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
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