MMD60R360P N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor MMD60R360P *.

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Datasheet Specifications

Part number: MMD60R360P
Manufacturer: INCHANGE
File Size: 273.80 KB
Datasheet: MMD60R360P-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on)≤0.38Ω
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 33 PD Total Dissipation @TC=25℃ 83 Tj Max. Operating Junction Temperature 150 Tstg Storage Tem

MMD60R360P Distributors

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MMD60R360P N-Channel MOSFET INCHANGE

INCHANGE MMD60R360P-like datasheet