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MMD80R900P N-Channel MOSFET

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Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor MMD80R900P *.

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Datasheet Specifications

Part number
MMD80R900P
Manufacturer
INCHANGE
File Size
203.90 KB
Datasheet
MMD80R900P-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* Motor contorl
* DC-DC conventers
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 6 3.8 18 PD Total Dissipa

MMD80R900P Distributors

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