NVD5C648NL

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	onsemi	NVD5C648NL	NVD5C648NLT4G	Power MOSFET, N Channel, 60 V, 89 A, 0.0034 ohm, TO-252 (DPAK), Surface Mount - Tape and Reel (Alt: NVD5C648NLT4G)	Avnet Americas	0	20000 units	$1.14	🛒 Buy Now

Part number:

NVD5C648NL

Manufacturer:

INCHANGE

File Size:

260.88 KB

Description:

N-channel mosfet.
isc N-Channel MOSFET Transistor NVD5C648NL FEATURES *Drain Current *ID= 89A@ TC=25℃ *Drain Source .
Voltage- VDSS= 60V(Min) *Static Drain-Source On-Resistance RDS(on) :4.1mΩ(Max) *100% avalanche teste.

NVD5C648NL Datasheet PDF

NVD5C648NL, ON Semiconductor
NVD5C648NL MOSFET – Power, Single N-Channel 60 V, 4.1 mW, 89 A Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Mini.

NVD5C632NL Datasheet PDF

NVD5C632NL, ON Semiconductor
NVD5C632NL MOSFET – Power, Single N-Channel 60 V, 2.5 mW, 155 A Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Min.

NVD5C668NL Datasheet PDF

NVD5C668NL, Inchange Semiconductor
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 49A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance :.

NVD5C668NL Datasheet PDF

NVD5C668NL, ON Semiconductor
NVD5C668NL Power MOSFET 60 V, 8.9 mW, 49 A, Single N−Channel Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimiz.

NVD5C684NL Datasheet PDF

NVD5C684NL, ON Semiconductor
NVD5C684NL Power MOSFET 60 V, 16.5 mW, 38 A, Single N−Channel Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimi.

NVD5C688NL Datasheet PDF

NVD5C688NL, ON Semiconductor
NVD5C688NL Power MOSFET 60 V, 27.4 mW, 17 A, Single N−Channel Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimi.

NVD5C434N Datasheet PDF

NVD5C434N, ON Semiconductor
NVD5C434N Power MOSFET 40 V, 2.1 mW, 163 A, Single N−Channel Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimiz.

NVD5C446N Datasheet PDF

NVD5C446N, ON Semiconductor
NVD5C446N Power MOSFET 40 V, 3.5 mW, 101 A, Single N−Channel Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimiz.

N-Channel MOSFET

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✔ NVD5C648NL Features

✔ NVD5C648NL Application

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