Part number:
NVD4C05NT4G
Manufacturer:
INCHANGE
File Size:
257.75 KB
Description:
N-channel mosfet.
* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATIONS
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=
NVD4C05NT4G Datasheet (257.75 KB)
NVD4C05NT4G
INCHANGE
257.75 KB
N-channel mosfet.
📁 Related Datasheet
NVD4C05N - N-Channel MOSFET
(ON Semiconductor)
NVD4C05N
MOSFET – Power, Single, N-Channel
30 V, 4.1 mW, 90 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minim.
NVD4804N - N-Channel Power MOSFET
(ON Semiconductor)
NTD4804N, NVD4804N
MOSFET – Power, Single, N-Channel, DPAK/IPAK
30 V, 117 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance t.
NVD4805N - Power MOSFET
(ON Semiconductor)
NTD4805N, NVD4805N
Power MOSFET
30 V, 88 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Mi.
NVD4806N - Power MOSFET
(ON Semiconductor)
NTD4806N, NVD4806N
Power MOSFET
30 V, 76 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Mi.
NVD4808N - Power MOSFET
(ON Semiconductor)
NTD4808N, NVD4808N
Power MOSFET
30 V, 63 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Min.
NVD4809N - Power MOSFET
(ON Semiconductor)
NTD4809N, NVD4809N
Power MOSFET
30 V, 58 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Mi.
NVD4810N - Power MOSFET
(ON Semiconductor)
NTD4810N, NVD4810N
Power MOSFET
30 V, 54 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Min.
NVD4813NH - Power MOSFET
(ON Semiconductor)
NTD4813NH, NVD4813NH Power MOSFET
Features
30 V, 40 A, Single N−Channel, DPAK/IPAK
• • • • • •
Low RDS(on) to Minimize Conduction Losses Low Capacita.