R6024ENZ1 - N-Channel MOSFET

INCHANGE

R6024ENZ1 Datasheet Preview — Preview of R6024ENZ1 PDF

Datasheet Details

Part number	R6024ENZ1
Manufacturer	INCHANGE
File Size	372.77 KB
Description	N-Channel MOSFET
Datasheet	R6024ENZ1-INCHANGE.pdf

R6024ENZ1 Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 24 A IDM Drain Current-Single Pluse 72 A PD Total Dissipation @TC=25℃ 120 W TJ Max.Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resi

Features

Drain Current.
ID= 24A@ TC=25℃.
Drain Source Voltage- : VDSS=600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 165mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 R6024ENZ1 Similar Datasheet

R6024ENJ - Power MOSFET (ROHM)
R6024KNJ - Nch 600V 24A Power MOSFET (ROHM)
R6024KNZ - Power MOSFET (ROHM)
R6020422 - Fast Recovery Rectifier (Powerex Power Semiconductors)
R6020425 - Fast Recovery Rectifier (Powerex Power Semiconductors)
R6020435 - Fast Recovery Rectifier (Powerex Power Semiconductors)
R6020622 - Fast Recovery Rectifier (Powerex Power Semiconductors)
R6020625 - Fast Recovery Rectifier (Powerex Power Semiconductors)

Other Datasheets by INCHANGE

R6024ENZ - N-Channel MOSFET
R6024ENX - N-Channel MOSFET
R6024KNX - N-Channel MOSFET
R6024KNZ1 - N-Channel MOSFET
R6020ENJ - N-Channel MOSFET
R6020ENX - N-Channel MOSFET

Published: Mar 1, 2021 |