R6024KNX Datasheet, Mosfet, INCHANGE

R6024KNX Features

• Mosfet
• Drain Current
    –ID= 24A@ TC=25℃
• Drain Source Voltage- : VDSS=600V(Min)
• Static Drain-Source On-Resistance : RDS(on) = 165mΩ(Max)
• 100% a

PDF File Details

Part number:

R6024KNX

Manufacturer:

INCHANGE

File Size:

247.48kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

R6024KNX Application

• Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continu

TAGS

R6024KNX

INCHANGE

📁 Related Datasheet

R6024KNJ - Nch 600V 24A Power MOSFET (ROHM)
R6024KNJ 　　Nch 600V 24A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.165Ω ±24A 245W lFeatures 1) Low on-resistance. 2) Ultra fast switching speed. .

R6024KNJ - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.165Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations fo.

R6024KNX - Power MOSFET (ROHM)
R6024KNX 　　Nch 600V 24A Power MOSFET 　　 Datasheet lOutline VDSS 600V 　 RDS(on)(Max.) 0.165Ω ID ±24A TO-220FM PD 74W 　 　　　　　　 lFeatures .

R6024KNZ - Power MOSFET (ROHM)
R6024KNZ 　　Nch 600V 24A Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 600V 0.165Ω ±24A 74W lFeatures 1) Low on-resistance. 2) Ultra fast swit.

R6024KNZ - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6024KNZ FEATURES ·Drain Current –ID= 24A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Re.

R6024KNZ1 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6024KNZ1 FEATURES ·Drain Current –ID= 24A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-R.

R6024KNZ1 - Power MOSFET (ROHM)
R6024KNZ1 　　Nch 600V 24A Power MOSFET 　　 Datasheet lOutline VDSS 600V 　 RDS(on)(Max.) 0.165Ω ID ±24A TO-247 PD 245W 　 　　　　　　 lFeatures .

R6024ENJ - Power MOSFET (ROHM)
R6024ENJ Nch 600V 24A Power MOSFET Data Sheet VDSS RDS(on) (Max.) ID PD 600V 0.165W 24A 40W lOutline LPT(S) (SC-83) TO-263(D2PAK) (1) (2) (3) lF.

R6024ENJ - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .

R6024ENX - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to.