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R6030ENZ1 N-Channel MOSFET

R6030ENZ1 Description

isc N-Channel MOSFET Transistor *.

R6030ENZ1 Features

* With TO-247 packaging
* With low gate drive requirements
* Easy to drive
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

R6030ENZ1 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 30 16.3 80 PD Total Dissipation 120 Tj Operating Junction Tem

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Datasheet Details

Part number
R6030ENZ1
Manufacturer
INCHANGE
File Size
256.98 KB
Datasheet
R6030ENZ1-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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