R6030ENZ1 N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number: R6030ENZ1
Manufacturer: INCHANGE
File Size: 256.98 KB
Datasheet: R6030ENZ1-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* With TO-247 packaging
* With low gate drive requirements
* Easy to drive
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 30 16.3 80 PD Total Dissipation 120 Tj Operating Junction Tem

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R6030ENZ1 N-Channel MOSFET INCHANGE

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