R6530ENZ N-Channel MOSFET

INCHANGE

R6530ENZ Description

isc N-Channel MOSFET Transistor R6530ENZ .
Designed for use in switch mode power supplies and general purpose applications.

R6530ENZ Features

* Drain Current
* ID= 30A@ TC=25℃
* Drain Source Voltage- : VDSS=650V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 140mΩ(Max)
* 100% avalanche tested

R6530ENZ Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pluse 90 A PD Total Dissipation @TC=25℃ 86 W TJ Max. Operating Junction Temperatu

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Datasheet Details

Part number: R6530ENZ
Manufacturer: INCHANGE
File Size: 261.31 KB
Datasheet: R6530ENZ-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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