RCX080N25 Datasheet, Mosfet, INCHANGE

RCX080N25 Features

• Mosfet
• Drain Current
    –ID= 8A@ TC=25℃
• Drain Source Voltage- : VDSS=250V(Min)
• Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max)
• 100% ava

PDF File Details

Part number:

RCX080N25

Manufacturer:

INCHANGE

File Size:

247.36kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

RCX080N25 Application

• Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continu

TAGS

RCX080N25

INCHANGE

📁 Related Datasheet

RCX080N25 - Nch 250V 8A Power MOSFET (Rohm)
RCX080N25 Nch 250V 8A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 250V 600mW 8A 35W lFeatures 1) Low on-resistance. 2) Fast switching speed..

RCX081N20 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor RCX081N20 FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Static Drain-Source On-Re.

RCX081N20 - Power MOSFET (ROHM)
RCX081N20 Nch 200V 8.0A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 200V 770mW 8.0A 40W lFeatures 1) Low on-resistance. 2) Fast switching sp.

RCX050N25 - 10V Drive Nch MOSFET (Rohm)
RCX050N25 Data Sheet 10V Drive Nch MOSFET RCX050N25  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Low input capacitance. 3).

RCX051N25 - Power MOSFET (ROHM)
RCX051N25 Nch 250V 5.0A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 250V 1360mW 5.0A 30W lFeatures 1) Low on-resistance. 2) Fast switching s.

RCX051N25 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor RCX051N25 FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Re.

RCX100N25 - Nch 250V 10A Power MOSFET (Rohm)
RCX100N25 Nch 250V 10A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 250V 320mW 10A 40W lFeatures 1) Low on-resistance. 2) Fast switching spee.

RCX100N25 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor RCX100N25 FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-R.

RCX120N20 - Power MOSFET (ROHM)
RCX120N20 Nch 200V 12A Power MOSFE Datasheet VDSS RDS(on) (Max.) ID PD 200V 325mW 12A 40W lFeatures 1) Low on-resistance. 2) Fast switching speed.

RCX120N20 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor RCX120N20 FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Static Drain-Source On-R.