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SPD04N60S5 N-Channel MOSFET

SPD04N60S5 Description

isc N-Channel MOSFET Transistor SPD04N60S5,ISPD04N60S5 *.

SPD04N60S5 Features

* Static drain-source on-resistance: RDS(on)≤0.95Ω
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Improved transconductance
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA

SPD04N60S5 Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
SPD04N60S5
Manufacturer
INCHANGE
File Size
239.81 KB
Datasheet
SPD04N60S5-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE SPD04N60S5-like datasheet