SPD04N60C2 Datasheet, Transistor, Infineon Technologies

SPD04N60C2 Features

  • Transistor n Technologies

PDF File Details

Part number:

SPD04N60C2

Manufacturer:

Infineon ↗ Technologies

File Size:

143.83kb

Download:

📄 Datasheet

Description:

Cool mos power transistor. and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology,

Datasheet Preview: SPD04N60C2 📥 Download PDF (143.83kb)
Page 2 of SPD04N60C2 Page 3 of SPD04N60C2

TAGS

SPD04N60C2
Cool
MOS
Power
Transistor
Infineon Technologies

📁 Related Datasheet

SPD04N60C3 - Power Transistor (Infineon)
63'1 & 6381 & &RRO026Œ 3RZHU7UDQVLVWRU )HDWXUH • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH VDS#Tjmax  9 5'6 .

SPD04N60C3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor SPD04N60C3,ISPD04N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanch.

SPD04N60S5 - Cool MOS Power Transistor (Infineon)
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate.

SPD04N60S5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor SPD04N60S5,ISPD04N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanch.

SPD04N50C3 - Cool MOS Power Transistor (Infineon Technologies)
63'1& &RRO026Œ 3RZHU7UDQVLVWRU )HDWXUH • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH VDS#Tjmax   9 5'6 RQ   Ω.

SPD04N50C3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor SPD04N50C3,ISPD04N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanche.

SPD04N80C3 - Cool MOS Power Transistor (Infineon Technologies)
SPD04N80C3 CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability Prod.

SPD04N80C3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor SPD04N80C3,ISPD04N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.3Ω ·Enhancement mode: ·100% avalanche.

SPD04P10PG - Power-Transistor (Infineon Technologies)
SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Normal level • Avalanche rated • Pb-free lead plating; RoHS pliant ° Qualified a.

SPD04P10PLG - Power-Transistor (Infineon Technologies)
SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Logic level • Avalanche rated • Pb-free lead plating; RoHS pliant ° Qualified ac.

Stock and price

part
Rochester Electronics LLC
N-CHANNEL POWER MOSFET
DigiKey
SPD04N60C2
0 In Stock
Qty : 831 units
Unit Price : $0.36
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts