SPD15P10PL Datasheet - INCHANGE

SPD15P10PL, P-Channel MOSFET

isc P-Channel MOSFET Transistor *

Features

* Static drain-source on-resistance: RDS(on)≤270mΩ(@VGS= -4.5V; ID= -9.7A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Fast switching application.

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -15 A PD Total Dissipation @TC=25℃ 128 W Tj Max.
Operating Junction Temperature -55~175

SPD15P10PL-INCHANGE.pdf