SPD15P10PG - P-Channel MOSFET
SPD15P10PG Features
* Static drain-source on-resistance: RDS(on)≤240mΩ(@VGS= -10V; ID= -10.6A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATIONS
* Fast switching application.
* ABSOLUTE M
