Datasheet Details
- Part number
- SPD15P10PG
- Manufacturer
- INCHANGE
- File Size
- 259.96 KB
- Datasheet
- SPD15P10PG-INCHANGE.pdf
- Description
- P-Channel MOSFET
SPD15P10PG Description
isc P-Channel MOSFET Transistor *.
SPD15P10PG Features
* Static drain-source on-resistance:
RDS(on)≤240mΩ(@VGS= -10V; ID= -10.6A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
SPD15P10PG Applications
* Fast switching application.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-100
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
-15
A
PD
Total Dissipation @TC=25℃
128
W
Tj
Max. Operating
Temperature
Junction -55~
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