SPP11N60C3 - N-Channel MOSFET
SPP11N60C3 Features
* Static drain-source on-resistance: RDS(on) ≤0.38Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Ultra low gate charge
* High peak current capability
