SPP15P10P Datasheet - INCHANGE

SPP15P10P, N-Channel MOSFET

isc P-Channel MOSFET Transistor SPP15P10P，ISPP15P10P *

Features

* Static drain-source on-resistance: RDS(on)≤0.24Ω
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -15 IDM Drain Current-Single Pulsed -60 PD Total Dissipation @TC=25℃ 128 Tj Max.
Operating Junction Temperature 175 Tstg Storag

SPP15P10P-INCHANGE.pdf