SPP11N60CFD Datasheet - INCHANGE

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SPP11N60CFD N-Channel MOSFET

isc N-Channel MOSFET Transistor SPP11N60CFD，ISPP11N60CFD *.
Ultra low gate charge. High peak current capability. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Volt.

SPP11N60CFD-INCHANGE.pdf

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Datasheet Details

Part number:

SPP11N60CFD

Manufacturer:

INCHANGE

File Size:

242.99 KB

Description:

N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤0.44Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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SPP11N60CFD N-Channel MOSFET INCHANGE

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