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SPP11N65C3 Datasheet - INCHANGE

SPP11N65C3 N-Channel MOSFET

*Ultra low gate charge *High peak current capability *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 33 PD Total Dissipation @TC=25℃ 125 T.

SPP11N65C3-INCHANGE.pdf

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Datasheet Details

Part number:

SPP11N65C3

Manufacturer:

INCHANGE

File Size:

243.13 KB

Description:

N-channel mosfet.

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SPP11N65C3 SPP11N65C3 N-Channel MOSFET INCHANGE

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