SPU30P06P Datasheet - INCHANGE

SPU30P06P, P-Channel MOSFET

isc P-Channel MOSFET Transistor *

Features

* Static drain-source on-resistance: RDS(on)≤75mΩ(@VGS= -10V; ID= -21.5A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Fast switching application.

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -30 A PD Total Dissipation @TC=25℃ 125 W Tj Max.
Operating Junction Temperature -55~175

SPU30P06P-INCHANGE.pdf