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SPU30P06P P-Channel MOSFET

SPU30P06P Description

isc P-Channel MOSFET Transistor *.

SPU30P06P Features

* Static drain-source on-resistance: RDS(on)≤75mΩ(@VGS= -10V; ID= -21.5A)
* Advanced trench process technology
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

SPU30P06P Applications

* Fast switching application.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -30 A PD Total Dissipation @TC=25℃ 125 W Tj Max. Operating Junction Temperature -55~175

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Datasheet Details

Part number
SPU30P06P
Manufacturer
INCHANGE
File Size
256.04 KB
Datasheet
SPU30P06P-INCHANGE.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET INCHANGE
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