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STU10NM65N N-Channel MOSFET

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Description

Isc N-Channel MOSFET Transistor STU10NM65N *.

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Datasheet Specifications

Part number
STU10NM65N
Manufacturer
INCHANGE
File Size
241.88 KB
Datasheet
STU10NM65N-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* With TO-251(IPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ TC=125℃ 9 5.7 A IDM Drain Current-Single Pulsed 36 A PD Total Dissipation @TC=25℃ 90

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