STU10N60M2 - N-CHANNEL POWER MOSFET
AM15572v1 These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.
These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.
They
STU10N60M2 Features
* Order codes VDS @ TJmax RDS(on) max ID STB10N60M2 STD10N60M2 STP10N60M2 STU10N60M2 650 V 0.600 Ω 7.5 A
* Extremely low gate charge
* Lower RDS(on) x area vs previous generation
* Low gate input resistance
* 100% avalanche tested
* Zener-protected Appli
