STU10N60M2 Datasheet - STMicroelectronics

STU10N60M2 N-CHANNEL POWER MOSFET

AM15572v1 These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They .

STU10N60M2 Features

* Order codes VDS @ TJmax RDS(on) max ID STB10N60M2 STD10N60M2 STP10N60M2 STU10N60M2 650 V 0.600 Ω 7.5 A

* Extremely low gate charge

* Lower RDS(on) x area vs previous generation

* Low gate input resistance

* 100% avalanche tested

* Zener-protected Appli

STU10N60M2-STMicroelectronics.pdf