STU10NC70ZI, STU10NC70Z Datasheet - ST Microelectronics

STU10NC70ZI N-Channel MOSFET

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large varie.

STU10NC70ZI Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo

STU10NC70Z_STMicroelectronics.pdf