STU10NM65N Datasheet - STMicroelectronics

STU10NM65N N-channel Power MOSFET

This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high effi.

STU10NM65N Features

* www.DataSheet4U.com Type VDSS (@Tjmax) 710 V 710 V 710 V 710 V RDS(on) max < 0.48 Ω < 0.48 Ω < 0.48 Ω < 0.48 Ω ID 2 3 3 1 2 STD10NM65N STF10NM65N STP10NM65N STU10NM65N 9A 9 A(1) 9A 9A 1 TO-220 IPAK 1. Limited only by maximum temperature allowed

* 3 1 3 1 2 100% avalanche

STU10NM65N Datasheet (543.81 KB)