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TIPL760C

NPN Transistor

TIPL760C Features

* Collector-Emitter Breakdown Voltage- : V(BR)CEO = 550V(Min.)

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Rugged Triple-duffused planar construction ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VC

TIPL760C General Description


*Rugged Triple-duffused planar construction ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Peak collector current PC Collector Power Dissipation @TC=25℃ Tj Ju.

TIPL760C Datasheet (208.25 KB)

Preview of TIPL760C PDF

Datasheet Details

Part number:

TIPL760C

Manufacturer:

INCHANGE

File Size:

208.25 KB

Description:

Npn transistor.

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TIPL760C NPN Transistor INCHANGE

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