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TIPL760C NPN Transistor

TIPL760C Description

isc Silicon NPN Darlington Power Transistor .
Rugged Triple-duffused planar construction ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emit.

TIPL760C Features

* Collector-Emitter Breakdown Voltage- : V(BR)CEO = 550V(Min. )

TIPL760C Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
TIPL760C
Manufacturer
INCHANGE
File Size
208.25 KB
Datasheet
TIPL760C-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE TIPL760C-like datasheet