TIP101 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor TIP101 .
High DC Current Gain- : hFE = 1000(Min)@ IC= 3A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min). Low Collector-Emitter Satu.

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Datasheet Specifications

Part number: TIP101
Manufacturer: INCHANGE
File Size: 208.99 KB
Datasheet: TIP101-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A I

TIP101 Distributors

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TIP101 NPN Transistor INCHANGE

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