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TIP115 PNP Transistor

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Description

isc Silicon PNP Darlington Power Transistor TIP115 .
High DC Current Gain- : hFE = 1000(Min)@ IC= -1A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min). Low Collector-Emitter Sa.

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Datasheet Specifications

Part number
TIP115
Manufacturer
INCHANGE
File Size
208.79 KB
Datasheet
TIP115-INCHANGE.pdf
Description
PNP Transistor

Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2

TIP115 Distributors

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PNP Transistor INCHANGE
INCHANGE TIP115-like datasheet