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TIP115 - PNP Transistor

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Description

High DC Current Gain- : hFE = 1000(Min)@ IC= -1A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.5V(Max)@ IC= -2A Complement to Type TIP110 Minimum Lot-to-Lot variations for robust device performance and

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Datasheet Details

Part number TIP115
Manufacturer INCHANGE
File Size 208.79 KB
Description PNP Transistor
Datasheet download datasheet TIP115 Datasheet
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isc Silicon PNP Darlington Power Transistor TIP115 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.5V(Max)@ IC= -2A ·Complement to Type TIP110 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
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