Datasheet Details
- Part number
- TIP112
- Manufacturer
- INCHANGE
- File Size
- 209.16 KB
- Datasheet
- TIP112-INCHANGE.pdf
- Description
- NPN Transistor
TIP112 Description
isc Silicon NPN Darlington Power Transistor TIP112 .
High DC Current Gain-
: hFE = 1000(Min)@ IC= 1A.
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min).
Low Collector-Emitter Sat.
TIP112 Applications
* Designed for general purpose amplifier and low speed
switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
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