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TIP112 - NPN Transistor

Datasheet Summary

Description

High DC Current Gain- : hFE = 1000(Min)@ IC= 1A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.5V(Max)@ IC= 2A Complement to Type TIP117 Minimum Lot-to-Lot variations for robust device performance and re

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Datasheet Details

Part number TIP112
Manufacturer INCHANGE
File Size 209.16 KB
Description NPN Transistor
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Full PDF Text Transcription

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isc Silicon NPN Darlington Power Transistor TIP112 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.5V(Max)@ IC= 2A ·Complement to Type TIP117 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
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